FDD6690A FDD6690A, rev. d FDD6690A n-channel, logic level, powertrench ? ? ? ? ? mosfet general description this n-channel logic level mosfet is produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. applications ? dc/dc converter ? motor drives september 2000 features ? 46 a, 30 v. r ds(on) = 0.0125 ? @ v gs = 10 v r ds(on) = 0.016 ? @ v gs = 4.5 v. ? low gate charge (17nc typical). ? fast switching speed. ? high performance trench technology for extremely low r ds(on) . ? 2000 fairchild semiconductor international g s d to-252 s d g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current - continuous ( note 1 ) 46 (note 1a) 12 drain current - pulsed 100 a maximum power dissipation @ t c = 25 o c (note 1) 50 t a = 25 o c (note 1a) 2.8 p d t a = 25 o c (note 1b) 1.3 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r jc thermal resistance, junction-to-case (note 1a) 2.5 c/w r ja thermal resistance, junction-to-ambient (note 1b) 96 c/w package marking and ordering information device marking device reel size tape width quantity FDD6690A FDD6690A 13?? 16mm 2500
FDD6690A FDD6690A, rev. d notes: 1. r ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab . r jc is guaranteed by design while r ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 s, duty cycle 2.0% a) r ja = 45 o c/w when mounted on a 1in 2 pad of 2oz copper. b) r ja = 96 o c/w on a minimum mounting pad. electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions min typ max units drain-source avalanche ratings (note 1) w dss single pulse drain-source avalanche energy v dd = 15 v, i d = 12 a 180 mj i ar maximum drain-source avalanche current 12 a off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 25 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gssf gate-body leakage current, forward v gs = 20v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 11.6 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -4 mv/ c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 12 a v gs = 10 v, i d = 12 a,t j =125 c v gs = 4.5 v, i d =10 a .0009 .0015 .0120 0.0125 0.019 0.016 ? i d(on) on-state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 5 v, i d = 12 a 44 s dynamic characteristics c iss input capacitance 1700 pf c oss output capacitance 340 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 140 pf switching characteristics (note 2) t d(on) turn-on delay time 10 18 ns t r turn-on rise time 12 22 ns t d(off) turn-off delay time 35 56 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 10 18 ns q g total gate charge 17 23 nc q gs gate-source charge 5 nc q gd gate-drain charge v ds = 15 v, i d = 12 a, v gs = 5 v, 6nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.3 a (note 2) 0.72 1.3 v
FDD6690A FDD6690A, rev. d typical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 6 a t a = 125 o c t a = 25 o c 0 5 10 15 20 25 30 35 40 12345 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 00.20.40.60.811.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 10203040 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.0v 10v 4.0v 3.5v 4.5v 5.0v 7.0v 0 10 20 30 40 00.511.522.53 v ds , drain-source voltage (v) i d , drain-source current (a) v gs = 10v 3.0v 2.5v 4.5v 3.5v 6.0v 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 12a v gs = 10v
FDD6690A FDD6690A, rev. d typical characteristics (continued) figure 7. gate-charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient themal response will change depending on the circuit board design. 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 12a v ds = 5v 10v 15v 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v 0.0001 0.001 0.01 0.1 1 10 100 300 0.0001 0.001 0.01 0.1 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 96c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) r ds(on) limit v gs = 10v single pulse r ja = 96 o c/w t a = 25 o c dc 10s 1s 100ms 10ms 1ms 100 single pulse time (sec) power (w) single pulse r ja = 96 o c/w t a = 25 o c
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